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Sony, Corp.
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| Part No. |
CXG1104TN
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| OCR Text |
... (h) vctl (l) v dd min. 2.0 0 2.6 ty p. 3.0 ? 3.0 max. 3.6 0.8 4.5 unit v v v 1 2 3 4 5 6 7 8 9 10 gnd gnd v dd cbypass (100pf) rf3 c rf (...9ghz 900mhz 1.9ghz 900mhz, 1.9ghz ? 1 ? 1 v dd = 3.0v, 0/3v control ? 2 vctl (high) = 3v v dd = 3v... |
| Description |
High Power Antenna Switch MMIC(SPDT Switch with Logic Control)For Use In Cellular Handsets(大功率天线开关微波集成电带逻辑控制的单刀双掷开关，用于蜂窝式手机）) 高功率天线单片开关（单刀双掷开关逻辑控制），用于蜂窝手机的使用（大功率天线开关微波集成电路（带逻辑控制的单刀双掷开关，用于蜂窝式手机）
High Power SPDT Switch with Logic Control
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| File Size |
40.37K /
4 Page |
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Mitsubishi
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| Part No. |
MGF0921A 0921A
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| OCR Text |
...
MGF0921A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Mag 0.912 0.905 0.899 0.894 0.891 0.887 0.884 0.882 0.879... |
| Description |
L & S BAND GaAs FET
From old datasheet system
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| File Size |
85.84K /
3 Page |
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Infineon
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| Part No. |
BFG19S
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| OCR Text |
... = 0.5 v, f = 1 mhz c eb - 4.6 - noise figure i c = 20 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - ...9ghz v ce = parameter 0 20 40 60 80 ma 120 i c 2 4 6 8 10 db 14 g 10v 5v 3v 2v 1v 0.... |
| Description |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
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| File Size |
112.38K /
6 Page |
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Murata Manufacturing Co., Ltd.
MURATA MANUFACTURING CO LTD
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| Part No. |
LQW15AN4N3C00D LQW15AN47NJ00D LQW15AN12NJ00D LQW15AN2N7C00D LQW15AN2N7D00D LQW15AN39NJ00D LQW15AN56NJ00D LQW15AN68NJ00D LQW15AN6N2D00D LQW15AN7N5J00D LQW15AN13NG00D
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| OCR Text |
... 0.05 0.2 0.1 0.2 0.1 w ? w 0.6 0.1 0.5 0.1 inductance (nh) 1.5-23, 100, 120 24-91 (in mm) ? 0.5 0.1 chip inductor (chip coil) for h...9ghz lqw15an47nh00 p 47nh 3% 100mhz 210ma 1.08ohm 25 200mhz 2.9ghz lqw15an47nj00 p 47nh 5% 100mhz ... |
| Description |
INDUCTOR 4.3NH 750MA 0402 1 ELEMENT, 0.0043 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 47NH 210MA 0402 1 ELEMENT, 0.047 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 12NH 500MA 0402 1 ELEMENT, 0.012 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
CHIP IND 0402 2.7NH /-0.2NH 850MA 0.05OHM 1 ELEMENT, 0.0027 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 2.7NH 850MA 0402 1 ELEMENT, 0.0027 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 39NH 250MA 0402 1 ELEMENT, 0.039 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 56NH 200MA 0402 1 ELEMENT, 0.056 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
CHIP IND 0402 68NH 5% 140MA 1.95OHM 1 ELEMENT, 0.068 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 6.2NH 700MA 0402 1 ELEMENT, 0.0062 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 7.5NH 570MA 0402 1 ELEMENT, 0.0075 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.013 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
95.13K /
5 Page |
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Infineon
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| Part No. |
BFS482
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| OCR Text |
...sistors in one package vps05604 6 3 1 5 4 2 eha07196 6 54 3 2 1 c1 e2 b2 c2 e1 b1 tr1 tr2 esd : e lectro s tatic d ischarge sensitive devi...9ghz v ce = parameter 0 5 10 15 20 25 30 35 ma 45 i c 6 8 10 12 14 16 18 db 22 g 1... |
| Description |
NPN Silicon RF Transistor for low noi...
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| File Size |
113.99K /
6 Page |
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Infineon
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| Part No. |
BFR93A
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| OCR Text |
...rent i c 50 ma base current i b 6 total power dissipation , t s 63 c 1) p tot 300 mw junction temperature t j 150 c ambient temperatu...9ghz v ce = parameter 0 10 20 30 40 ma 60 i c 4 6 8 10 db 14 g 10v 5v 3v 2v 1v 0.7v p... |
| Description |
NPN Silicon RF Transistor for low noi...
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| File Size |
136.13K /
7 Page |
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it Online |
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Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280W Q62702-F1504
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| OCR Text |
...
GHz pF 0.4 dB 1.5 2 -
IC = 6 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 5 V, f = 1 MHz
Collector-em...9GHz VCE = Parameter
22 10V 2V dB
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
17 dB... |
| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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| File Size |
59.70K /
7 Page |
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it Online |
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Price and Availability
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