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  5.5-9ghz Datasheet PDF File

For 5.5-9ghz Found Datasheets File :: 808    Search Time::1.703ms    
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    MGF7175C 7175C

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. MGF7175C 7175C
OCR Text ...rol voltage Input power Ratings 5 5 4.5 5 Unit V V V dBm deg.C deg.C Operating case temperature -30 ~ +85 Storage temperature -30 ~ +100 *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25 deg.C) ...
Description From old datasheet system
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER

File Size 19.68K  /  2 Page

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    AD8313-EVAL AD8313ARM AD8313ARM-REEL AD8313ARM-REEL7 AD8313

ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
Part No. AD8313-EVAL AD8313ARM AD8313ARM-REEL AD8313ARM-REEL7 AD8313
OCR Text 5 GHz Min High Dynamic Range: 70 dB to 3.0 dB High Accuracy: 1.0 dB over 65 dB Range (@ 1.9 GHz) Fast Response: 40 ns Full-Scale Typical Con...5.5 V Low Power: 40 mW at 3 V Power-Down Feature: 60 W at 3 V Complete and Easy to Use APPLICATIONS ...
Description 0.1 GHz-2.5 GHz, 70 dB Logarithmic Detector/Controller
0.1 GHz-2.5 GHz, 70 dB Logaritmic Detector/Controller
0.1 - 2.5 GHz, 70 dB Logarithmic Detector / Controller

File Size 261.03K  /  16 Page

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    HA22022

Hitachi Semiconductor
Part No. HA22022
OCR Text ...ier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.3 dB typ. @1.5Ghz) High power gain (16 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount package (MPAK-5) O...
Description GaAs MMIC Low Noise Amplifier for Micro Wave Application

File Size 44.64K  /  12 Page

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    Mitsubishi
Part No. MGF0921A 0921A
OCR Text ...ltage Ratings -15 -15 1800 -5.0 15 1 175 -65 to +175 Unit V V mA mA mA W C C VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg Drain current Reverse gate current Forward gate current Total power dissipation Cannel temp...
Description L & S BAND GaAs FET
From old datasheet system

File Size 85.84K  /  3 Page

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    RF2365 RF2365PCBA

RFMD[RF Micro Devices]
Part No. RF2365 RF2365PCBA
OCR Text ...CMOS ! Package Style: SOT 5-Lead GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * 1.6dB Noise Figure @ 1850MHz * 1.75dB Noise Figure @ 2450MHz * 18.0dB Gain at PCS/DCS RF IN 1 5 RF OUT * 15.5dB Gain at 2.45GHz ...
Description 3V LOW NOISE AMPLIFIER

File Size 134.07K  /  8 Page

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    SGF25

SANYO[Sanyo Semicon Device]
Part No. SGF25
OCR Text ...Tj Tstg Conditions Ratings 6.0 -5.0 100 200 150 -55 to +150 Unit V V mA mW C C Electrical Characteristics at Ta=25C Parameter Gate to source breakdown voltage Zero gate voltage drain current Gate to source cutoff voltage Forward transfe...
Description For C- to X-band local oscillator and amplifier

File Size 63.38K  /  3 Page

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    FLM7179-18F

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. FLM7179-18F
OCR Text ...h Tc = 25C Condition Rating 15 -5 83.3 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The for...
Description C-Band Internally Matched FET C波段内部匹配场效应管
From old datasheet system

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    FLM7179-4F

Electronic Theatre Controls, Inc.
ETC
Part No. FLM7179-4F
OCR Text ...h Tc = 25C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The for...
Description C-Band Internally Matched FET

File Size 248.80K  /  4 Page

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    FLM7179-8F

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. FLM7179-8F
OCR Text ...h Tc = 25C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W C C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forw...
Description C-Band Internally Matched FET

File Size 251.02K  /  4 Page

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