38a pdf Datasheet P10 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : BSF68G67 LTC691 PRELIMI E003429 RP1315 18200 AD890 N74F133D
	Product Description
	Full Text Search

38a Datasheet PDF File

For 38a Found Datasheets File :: 548 Search Time::3.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

				Microsemi, Corp. ADPOW[Advanced Power Technology]
Part No.	APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
OCR Text	38a 0.260 POWER MOS 7 (R) R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by si...
Description	38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	101.61K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF5210SPBF IRF5210LPBF
OCR Text	...V RDS(on) = 60m G S ID = -38a D Description Features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely...
Description	HEXFET Power MOSFET
File Size	694.25K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFPS38N60LPBF
OCR Text	...p. Trr typ. ID 600V 120m 170ns 38a Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabilities offer ...
Description	HEXFET Power MOSFET
File Size	197.18K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP4266PBF
OCR Text	... 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce...
Description	Insulated Gate Bipolar Transistor
File Size	880.51K / 11 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. Microsemi, Corp. ADPOW[Advanced Power Technology]
Part No.	APT10026JLL_03 APT10026JLL APT10026JLL03
OCR Text	...1 MHz VGS = 10V VDD = 500V ID = 38a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38a @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38a, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V, VGS = 15V ID = 38a, RG = ...
Description	30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	107.27K / 5 Page	View it Online	Download Datasheet

				Microsemi, Corp. ADPOW[Advanced Power Technology]
Part No.	APT10026JFLL_03 APT10026JFLL APT10026JFLL03
OCR Text	...1 MHz VGS = 10V VDD = 500V ID = 38a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38a @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38a, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V VGS = 15V ID = 38a, RG = 3...
Description	30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	107.67K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTP76N075T IXTA76N075T
OCR Text	... r ds(on) normalized to i d = 38a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 76a i d = 38a f...
Description	Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated
File Size	172.52K / 5 Page	View it Online	Download Datasheet

For 38a Found Datasheets File :: 548 Search Time::3.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |