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				LITE-ON ELECTRONICS INC
Part No.	SBG1035
OCR Text	... 31.5 45 280 notes : 1. 300us pulse width, 2% duty cycle. 2. measured at 1.0mhz and applied re verse voltage of 4.0v dc. 3.thermal resistance junction to cas e. v rms v dc v rrm i (av) i...
Description	10 A, 35 V, SILICON, RECTIFIER DIODE
File Size	69.85K / 2 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	SRAF820 SRAF82013 SRAF8150
OCR Text	... 65 to + 150 note1: pulse test: 300us pulse width, 1% duty cycle 5 typical junction capacitance (note 2) 430 360 typical thermal resistance note2: measured at 1 mhz and applied reverse voltage of 4.0v d.c. version:f12 ordering information(e...
Description	8.0AMPS. Isolated Schottky Barrier Rectifiers
File Size	237.44K / 3 Page	View it Online	Download Datasheet

				LITE-ON SEMICONDUCTOR CORP
Part No.	EP6KE24A
OCR Text	...6ke200a, vfmax = 3.5v at if=50a 300us square wave pulse. for unidirectional devices ep6ke220a to ep6ke440a, vfmax = 5.0v at if=50a 300us square wave pulse. breakdown voltage bv volts @it semiconductor lite-on legal disclaimer notice ...
Description	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
File Size	111.12K / 4 Page	View it Online	Download Datasheet

				LITE-ON Semiconductor
Part No.	MB140
OCR Text	...te: 1.pulse test: pulse width = 300us , duty cycle = 2% maximum rms voltage units v v v maximum recurrent peak reverse voltage vrrm vrms maximum average forward rectified current @t l =110 peak forward surge current 8.3 ms single half-si...
Description	Surface Mount Schottky Barrier Rectifiers
File Size	61.50K / 2 Page	View it Online	Download Datasheet

				Rohm
Part No.	DAN217T146
OCR Text	...8.3ms t ifsm 1ms im=1ma if=10ma 300us time ?????????g?r 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 1ms im=100ma if=10a 300us time mounted on epoxy board 2/2 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data s...
Description	Switching Diode
File Size	344.91K / 3 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY27UF081G2M-VCS
OCR Text	...) (min.) - page program time: 300us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
File Size	479.00K / 48 Page	View it Online	Download Datasheet

				GTM
Part No.	GT2531
OCR Text	...ion temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad. 2 GT2531 Page: 2/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel El...
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	413.24K / 7 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	SUF2001
OCR Text	... pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature suf2001 rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 3 of 13 p-channel mosfet electrical characteri...
Description	30V Dual N-and P-channel Trench MSFET
File Size	542.97K / 13 Page	View it Online	Download Datasheet

				Zowie Technology Corporation Zowie Technology Corpor...
Part No.	SS22H SS26H
OCR Text	... o c notes : (1) pulse test : 300us pulse width, 1% duty cycle (2) p.c.b. mounted with 0.2 x 0.2" ( 5.0 x 5.0mm ) copper pad areas dimensions in inches and (millimeters) r ja r jl t a =100 o c mechanical data halogen-free typ...
Description	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
File Size	41.91K / 2 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	MBR2545CT
OCR Text	...ature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * ...
Description	(MBR25xxCT) Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
File Size	131.48K / 2 Page	View it Online	Download Datasheet

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