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For 28m Found Datasheets File :: 465 Search Time::5.281ms
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				SYNC-POWER[SYNC POWER Crop.]
Part No.	SPN4920S8TG SPN4920 SPN4920S8RG
OCR Text	...ng . FEATURES 30V/7.2A,RDS(ON)= 28m@VGS= 10V 30V/6.0A,RDS(ON)= 36m@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P package design APPLICATIONS Power Ma...
Description	N-Channel Enhancement Mode MOSFET
File Size	205.72K / 8 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Co... TSC[Taiwan Semiconductor Company, Ltd]
Part No.	TSM6866DCA TSM6866D
OCR Text	...S (on), Vgs @ 4.5V, Ids @ 6.5A =28m RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40m Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed ...
Description	20V Dual N-Channel MOSFET w/ESD Protected
File Size	151.28K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semicondu... AOSMD[Alpha & Omega Semiconductors]
Part No.	AOP600L AOP600
OCR Text	...5A (V GS = 10V) -6.6A RDS(ON) < 28m < 35m (VGS = -10V) < 43m < 58m (VGS =- 4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings T A=25C unless otherwise ...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	136.97K / 7 Page	View it Online	Download Datasheet

				AOSMD[Alpha & Omega Semiconductors]
Part No.	AO4818L AO4818
OCR Text	...ON) < 19m (VGS = 10V) RDS(ON) < 28m (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS G...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	193.57K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLR2908PBF IRLU2908PBF
OCR Text	...LU2908PbF VDSS = 80V RDS(on) = 28m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G S ID = 30A Description ...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	318.57K / 12 Page	View it Online	Download Datasheet

				ETC
Part No.	P2804NVG
OCR Text	...hannel P-Channel 40 -40 RDS(ON) 28m 65m ID 7A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Puls...
Description	N- & P-Channel Enhancement Mode Field Effect Transistor
File Size	515.01K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO6804
OCR Text	...N) < 26m (VGS = 4.0V) RDS(ON) < 28m (VGS = 3.1V) RDS(ON) < 31m (VGS = 2.5V) D1 TSOP6 Top View S1 D1/D2 S2 16 25 34 G1 D1/D2 G2 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol 10 Sec Steady State P...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	135.02K / 4 Page	View it Online	Download Datasheet

				ETC List of Unclassifed Manufacturers
Part No.	P2804BVG ELECTRONICTHEATRECONTROLSINC.-P2804BVG
OCR Text	...CT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 7.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pul...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	287.61K / 5 Page	View it Online	Download Datasheet

				Pan Jit International Inc.
Part No.	PJD12P03L
OCR Text	28m * RDS(ON), VGS@ -4.5V,IDS@ -5.0A=36m * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for DC/DC Converters * Fully Characterized Avalanche Voltage and Current * Pb free pro...
Description	30V P-Channel Enhancement Mode MOSFET
File Size	147.20K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON3816
OCR Text	...(ON) < 23m (VGS = 4V) RDS(ON) < 28m (VGS = 2.5V) ESD Protected D1 DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 S1 G1 G2 D2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Sou...
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	114.54K / 4 Page	View it Online	Download Datasheet

For 28m Found Datasheets File :: 465 Search Time::5.281ms
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