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  200us Datasheet PDF File

For 200us Found Datasheets File :: 607    Search Time::1.219ms    
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    2731-200P

Microsemi Corporation
Part No. 2731-200P
OCR Text ...CTERISTICS @ 25 OC, Pulse Width=200us, 10% Symbol PIn Gp c Droop R/L VSWR-T jc Characteristics Input Power Power Gain Collector Efficiency Pulse Droop Input Return Loss Load Mismatch Tolerance Thermal Resistance Test Conditions Vcc=36V, Po...
Description 200 Watts - 200渭s, 10%, 36V S-Band Pulsed Radar 2700 - 3100 MHz

File Size 358.36K  /  2 Page

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    HY5DU561622FFP-D43 HY5DU561622FFP-H HY5DU561622FFP-J HY5DU561622FFP-K HY5DU561622FFP-L HY5DU561622FLFP-D5 HY5DU561622FLF

Hynix Semiconductor
Part No. HY5DU561622FFP-D43 HY5DU561622FFP-H HY5DU561622FFP-J HY5DU561622FFP-K HY5DU561622FFP-L HY5DU561622FLFP-D5 HY5DU561622FLFP-D43 HY5DU561622FLFP-H HY5DU561622FLFP-K HY5DU561622FLFP-J HY5DU561622FLFP-L
OCR Text ...table, the DDR SDRAM requires a 200us delay prior to applying an executable command. Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a PRECHARG...
Description 256Mb DDR SDRAM

File Size 324.47K  /  27 Page

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    HY5DU561622FFP-D43I HY5DU561622FFP-HI HY5DU561622FFP-JI HY5DU561622FFP-KI HY5DU561622FFP-LI HY5DU561622FLFP-JI HY5DU5616

Hynix Semiconductor
Part No. HY5DU561622FFP-D43I HY5DU561622FFP-HI HY5DU561622FFP-JI HY5DU561622FFP-KI HY5DU561622FFP-LI HY5DU561622FLFP-JI HY5DU561622FLFP-LI HY5DU561622FLFP-HI HY5DU561622FLFP-KI HY5DU561622FLFP-D43I HY5DU561622FLFP-D5I
OCR Text ...table, the DDR SDRAM requires a 200us delay prior to applying an executable command. Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a PRECHARG...
Description 256Mb DDR SDRAM

File Size 319.94K  /  27 Page

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    EMP116MAAFLF-70E

Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
Part No. EMP116MAAFLF-70E
OCR Text ... TIMING WAVEFORM OF POWER UP 200us VCC(Min.) VCC CS# Power Up Mode Normal Operation NOTE ( POWER UP ) 1. After Vcc reaches Vcc(Min.) , wait 200us with CS# high. Then you get into the normal operation. (c)(c)(c)(c) Rev 0...
Description 1Mx16 Pseudo Static RAM

File Size 468.96K  /  11 Page

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    STT181 STT181GK08 STT181GK14 STT181GK16 STT181GK12 STT181GK18

Electronic Theatre Controls, Inc.
Sirectifier Semiconductors
ETC
List of Unclassifed Manufacturers
Part No. STT181 STT181GK08 STT181GK14 STT181GK16 STT181GK12 STT181GK18
OCR Text ...0 A2s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.5A diG/dt=0.5A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA A/us non repetitive, IT=500A 500 1000 120 60 8 10 -40...+125 125 -40...+125 ...
Description Thyristor-Thyristor Modules

File Size 484.63K  /  4 Page

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    HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB

Hynix Semiconductor, Inc.
Part No. HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB
OCR Text ...0ns (min.) - Page program time: 200us (typ.) COPY BACK PROGRAM MODE - Fast page copy without external buffering CACHE PROGRAM MODE - Internal Cache Register to improve the program throughput FAST BLOCK ERASE - Block erase time: 2ms (Typ.) ...
Description 16Gbit (2Gx8bit) NAND Flash
2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52

File Size 352.98K  /  49 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY27US08121B-TIS HY27US16121B-TIP HY27US08121B-FPCB
OCR Text ...ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering fast block erase - block erase time: 2ms (typ.) status register electronic signature - 1st cycle: manufacturer code - 2nd cyc...
Description 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
32M X 16 FLASH 3.3V PROM, 18 ns, PDSO48
64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63

File Size 368.68K  /  40 Page

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