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200a 1200v Datasheet PDF File

For 200a 1200v Found Datasheets File :: 906 Search Time::1.312ms
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				IRF[International Rectifier]
Part No.	IRG4PH40UD2-E IRG4PH40UD2-EPBF
OCR Text	...5 See Fig 16 See Fig 17 di/dt = 200a/s VR = 200V IF = 8.0A ns J nH pF ns A nC TJ=25C TJ=125C TJ=25C TJ=125C A/s TJ=25C TJ=125C 2 www.irf.com IRG4PH40UD2-E 50 45 40 Square wave: 60% of rated voltage I Load Current...
Description	41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
File Size	247.90K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH50MD2
OCR Text	... 680 1838 T J = 125C 16 di/dt = 200a/s -- 120 -- A/s T J = 25C See Fig. -- 76 -- T J = 125C 17 Pulse width 5.0s, VCC=80%(V CES), V GE=20V, L=10H, single shot. R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Typ. 89 22 26 100 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v, @Vge=15V, Ic=23A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v @Vge=15V Ic=23A)
File Size	388.24K / 8 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5809 NTE5800
OCR Text	.... . . . . . . . . . . . . . . . 200a Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . ...
Description	Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp Axial Lead Standard Recovery Silicon Rectifiers 3 Amp
File Size	16.37K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA15N120ANTD
OCR Text	...se Recovery Current 30 di/dt = 200a/s Forward Current , IF [A] 10 Reverse Recovery Currnet , Irr [A] 25 20 TJ = 125 C TJ ...1200v NPT Trench IGBT Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 ...
Description
File Size	767.54K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	CM200DU-24F
OCR Text	.................................. 200a VCES ......................................................... 1200v Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRA...
Description	HIGH POWER SWITCHING USE 大功率开关使
File Size	66.90K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM200DU-24F
OCR Text	... = 0V IC = 20mA, VCE = 10V IC = 200a, VGE = 15V, Tj = 25C IC = 200a, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 200a, VGE = 15V IE = 200a, VGE = 0V Min. - - 5 - - - - Typ. - - 6 1.8 1.9 2200 - Max. 1...
Description	Trench Gate Design Dual IGBTMOD?/a> 200 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/1200 Volts
File Size	63.74K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor http://
Part No.	FGL40N120AND FGL40N120ANDTU
OCR Text	...25C TC = 125C IF = 40A, di/dt = 200a/s TC = 25C TC = 125C TC = 25C TC = 125C Min. --------- Typ. 3.2 2.7 75 130 8 13 300 845 Max....1200v NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300...
Description	1200v NPT IGBT
File Size	488.98K / 9 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5568 NTE5569 NTE5567 NTE5571
OCR Text	.... . . . . . . . . . . . . . . . 200a/s NTE5569, NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/s Typical Delay Time, td . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Silicon Controlled Rectifier (SCR) for Phase Control Applications
File Size	25.44K / 3 Page	View it Online	Download Datasheet

				STMicroelectronics N.V.
Part No.	STP1N120
OCR Text	...operating area 2. ISD 1A, di/dt 200a/s, VDD 960 Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 2.78 62.5 300 Unit C/W C/W C Rthj-amb (1) Thermal resistance junction-amb max Tl Maximum ...
Description	channel 1200v - 30- 500mA - TO-220 Zener - protected SuperMESHPower MOSFET 通道1200 30 500mA20齐纳-保护SuperMESH⑩功率MOSFET channel 1200v - 30ヘ - 500mA - TO-220 Zener - protected SuperMESH⑩ Power MOSFET channel 1200v - 30Ω - 500mA - TO-220 Zener - protected SuperMESH Power MOSFET
File Size	118.82K / 10 Page	View it Online	Download Datasheet

For 200a 1200v Found Datasheets File :: 906 Search Time::1.312ms
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