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2.4-5.2ghz Datasheet PDF File

For 2.4-5.2ghz Found Datasheets File :: 1769 Search Time::4.672ms
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				Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EPA1200A
OCR Text	... 3800 -1.0 4700 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=12mA Source Breakdown Voltage Igs=12mA Thermal Resistance (Au-Sn Eutectic Attach) -11 -7 -15 -14 4 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABS...
Description	High Efficiency Heterojunction Power FET
File Size	26.76K / 2 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MT4S100T
OCR Text	... Gain:\|S21e\| =17.0dB (@f=2GHz) 2 1.20.05 0.90.05 1.20.05 0.80.05 2 1 Type name 2 3 3 4 Maximum Ratings (Ta = 25C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Colle...
Description	UHF LOW NOISE AMPLIFIER APPLICATION
File Size	121.39K / 5 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1533KB2
OCR Text	...GHz at low operating voltage of 2.5V, and is operated up to 25dBm at 3.0V operating voltage. The ultra small & ultra thin FLP6 package is ap...4 Pin connection 1.P1 2.GND 3.P2 4.VCTL2 5.PC 6.VCTL1 nPACKAGE OUTLINE NJG1533KB2 +2.5~+6.5V 0...
Description	SPDT SWITCH GaAs MMIC
File Size	159.47K / 12 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard... HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-33143- ATF33143 ATF-33143-BLK ATF-33143-TR1 ATF-33143-TR2
OCR Text	...rameter Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Total Power Dissipation [4] RF Input Power Channel Temperature [5] Storage Temperature Thermal Resistance [6] Units V V V mA mW dBm C C C/...
Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	145.67K / 14 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	ATF34143 ATF-34143-TR2 ATF-34143 ATF-34143-BLK ATF-34143-TR1
OCR Text	...arameter Drain - Source Voltage[2] Gate - Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Total Power Dissipation [4] RF Input Power Channel Temperature Storage Temperature Thermal Resistance [5] Units V V V mA mW dBm C C C/W Absol...
Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	149.64K / 15 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. SIRENZA[SIRENZA MICRODEVICES] Stanford Microdevices List of Unclassifed Manufacturers
Part No.	SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text	...e Noise Figure Noise Figure 2.00 1.75 Noise Figure (dB) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1.5 Product Features * * * * * 1.7 1.9...4.75 90 5 108 80 5.25 120 Typ. Max. 2.0 16.5 - - 1.3 - Min. >2.0 13 10 10 - 33 14.5 12 13 1.05 35 19...
Description	1700-2200 MHz High Linearity Low Noise Amplifier Module
File Size	158.74K / 7 Page	View it Online	Download Datasheet

				Mitel Semiconductor MITEL[Mitel Networks Corporation]
Part No.	SP8855 SP8855E
OCR Text	2.8GHz Parallel Load Professional Synthesiser Advance Information Supersedes version in January 1996 Professional Products IC Hanbook, HB24...4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Inpu...
Description	2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
File Size	168.71K / 14 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM1011-2L
OCR Text	... MIN. TYP. MAX. UNIT 600 mS -2.0 -5 -3.5 2.0 5.0 -5.0 2.6 6.0 V A V C/W The information contained herein is presented only as a gu...4-R2.4 Unit : mm 2.50.3 9.70.3 Gate Source Drain 0.50.15 13.00.3 17.0 MAX. 8.5 MAX. ...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	142.06K / 5 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maxim Integrated Products
Part No.	MAX2392EVK MAX2391EVKIT MAX2392EVKIT MAX2393EVKIT
OCR Text	...n Eb/No Operate from a Single +2.7V to +3.3V Supply Over 90dB of Gain-Control Range Channel Selectivity Fully On-Chip, with Superior ACS ...4 2 DESCRIPTION 100pF capacitors (0402) Murata GRP1555C1H101J 10nF capacitors (0402) Murata GRP155R7...
Description	Evaluation Kits for the MAX2391/MAX2392/MAX2393 MAX2391/MAX2392/MAX2393 Evaluation Kits
File Size	692.63K / 18 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Fujitsu Component Limited.
Part No.	FLU17ZM
OCR Text	..., IDS=30mA IGS=-30uA VDS=10V, f=2.0GHz, IDS=0.6IDSS(Typ.) Channel to Case Min. -1.0 -5 31.5 11.5 Limit Typ. 600 300 -2.0 32.5 12.5 12 Max. 9...4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature [] OUTPUT POWER & POWER ADDED EFFICIENCY...
Description	From old datasheet system L-Band Medium & High Power GaAs FET
File Size	229.77K / 8 Page	View it Online	Download Datasheet

For 2.4-5.2ghz Found Datasheets File :: 1769 Search Time::4.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |