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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V6472
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| OCR Text |
12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use i...channel temperature Storage temperature
(Ta=25 deg.C) Ratings -15 -15 12 -30 63 53.6 175 -65 ~ +1... |
| Description |
6.4 ~ 7.2GHz BAND 12w INTERNALLY MATCHED GaAs FET
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| File Size |
184.81K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V7177
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| OCR Text |
12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use i...channel temperature Storage temperature Ratings -15 -15 12 -30 63 53.6 175 -65 to +175 Unit V V A mA... |
| Description |
7.1 - 7.7GHz BAND 12w INTERNALLY MATCHED GaAs FET
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| File Size |
221.92K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD12MVS1
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| OCR Text |
...OSFET Power Transistor, 175MHz, 12w
OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
2
High P...channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VD... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12w
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| File Size |
428.96K /
7 Page |
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it Online |
Download Datasheet |
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Sirenza Microdevices, Inc.
SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
XD010-22S-D2F
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| OCR Text |
12w power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular b...channel
o o
Unit V Hours
Typical 8000 1.2 X 106
Pin Description
Pin # 1 2 3,4 5 Flange Fu... |
| Description |
1805-1880 MHz Class A/AB 12w Power Amplifier Module
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| File Size |
208.01K /
5 Page |
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it Online |
Download Datasheet |
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