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TY Semiconductor Co., Ltd
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| Part No. |
STS6601
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| OCR Text |
...n-to-ambient r ja a t a =25 c -12 a t a =70 c t a =70 c a w -2.6 1.28 product specification 1 of 2 4008-318-123 sales@twtysemi.com http:/...ohm total gate charge rise time turn-off delay time v ds =-30v,i d =-3.2a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS
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| File Size |
80.63K /
2 Page |
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SamHop Microelectronics
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| Part No. |
STS8216
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| OCR Text |
...ature with temperature 30 24 18 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 2 v v g s = 1 . 5 v v g s = 4 v v g s = 2 . 5 v 15 12 9 6 3 0 0 0.4 2.4 2.0 1.6 1.2 0.8 tj=125 c 25 c 36 30 24 18 12 6 1 1 6 12 18 24 30 v g s =2.5v v g s =4v 2.0 1.8 ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
181.58K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STS8213
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| OCR Text |
...units parameter 20 7 27 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r d...ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =3.5... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.35K /
7 Page |
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it Online |
Download Datasheet |
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SamHop
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| Part No. |
STS8212
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| OCR Text |
...units parameter 20 8 50 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r d...ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =4a in... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
102.86K /
7 Page |
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it Online |
Download Datasheet |
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Peregrine Semiconductor
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| Part No. |
PE4280MLIAA PE428014 PE4280-14
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| OCR Text |
...10 gnd ground 11 gnd ground 12 4 gnd ground 13 1 rf2 rf i/o 14 gnd ground 15 gnd ground 16 2 c2 control 2 17 2 c1 control...ohm t-line 75 ohm t-line 75 ohm t-line 75 ohm t-line 1 2 j5 j5 r1 1m r1 1m r2 1m r2 1m vdd 1 gnd 3 v... |
| Description |
75 SPDT CATV UltraCMOS Switch 5 MHz - 2.2 GHz
75 Ω SPDT CATV UltraCMOS
75 Ω SPDT CATV UltraCMOS?
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| File Size |
884.81K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STS8217
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| OCR Text |
...units parameter 24 7 45 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r d...ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =3.5a ... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
102.73K /
7 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STS8215
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| OCR Text |
...its parameter 20 5.5 22 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r d...ohm v gs =4.5v , i d =2.75a r ds(on) drain-source on-state resistance i dss ua gate threshold voltag... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
103.65K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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