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Advanced Power Technology, Ltd.
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| Part No. |
APTDF100H120
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| OCR Text |
... v rrm = 1200v i c = 100a @ tc = 60c applicatio n ? uninterruptible power supply (ups) ? ind uctio n heati ng ? weld...800v di/dt = 200a/s t j = 125c 19 a t rr reverse recovery time 210 ns q rr rev... |
| Description |
Fast Diode Rectifier Bridge Power Module 快速二极管整流桥电源模
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| File Size |
239.28K /
4 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM100TF-28H
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| OCR Text |
... = 0V IC = 10mA, VCE = 10V IC = 100a, VGE = 15V IC = 100a, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800v, IC = 100a, VGE = 15V IE = 100a, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 510 - Max. 1.0 0.5 8... |
| Description |
122 x 32 pixel format, LED Backlight available
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
52.34K /
4 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
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| Part No. |
STP4NC80ZFP
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| OCR Text |
... iii mosfet (1)i sd 4a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax . (*)pulse width limited by maximum temperature allowed to-220 1 2 3...800v < 2.8 w 4a stb4nc80z-1 800v < 2.8 w 4a symbol parameter value unit stp(b)4nc80z(-1) stp4nc80zfp... |
| Description |
N-CHANNEL 800v 2.4 OHM 4A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET
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| File Size |
124.18K /
11 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120TA57FP
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| OCR Text |
...A IS = - 17A VR = 600V diS/dt = 100a/s IS = - 17A VR = 600V diS/dt = 100a/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2 7
Max 17 13 1.3 18 32...800v RG =5 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=800v RG=5 TJ=125C L=100H
t d... |
| Description |
Triple phase leg MOSFET Power Module
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| File Size |
313.22K /
6 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT5N100
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| OCR Text |
...4.2 5.5 6.8 m c i f =5a,di/dt=100a/ m s,v ds =100v body diode reverse recovery charge i f =5a,di/dt=100a/ m s,v ds =100v turn-off fall tim...800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance ch... |
| Description |
1000V,4A N-Channel MOSFET
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| File Size |
392.38K /
6 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120H57FTG
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| OCR Text |
...A IS = - 17A VR = 600V diS/dt = 100a/s IS = - 17A VR = 600V diS/dt = 100a/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2 7
Max 17 13 1.3 18 32...800v RG =5 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=800v RG=5 TJ=125C L=100H
t d... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
290.03K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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