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Microchip
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| Part No. |
SST12LF03-Q3DE
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| OCR Text |
...wer-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? low shut-down current (...2011 silicon storage technology, inc. ds75010b 09/11 2 2.4 ghz high-gain, high-efficiency front-end ... |
| Description |
SST Power Amplifiers
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| File Size |
342.83K /
18 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK70X04K3Z
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| OCR Text |
...on) = 3.7 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 40 v) (3) enhancement mode: v th = 3.0 to 4.0...2011-09-06 rev.1.0 tk70x04k3z 2 5. 5. 5. 5. thermal characteristics thermal characteristics t... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
249.66K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TK20S04K3L
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| OCR Text |
...(on) = 11 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 40 v) (3) enhancement mode: v th = 2.0 to 3.0...2011/65/eu of the european parliament and of the council of 8 june 2011 on the restriction of the us... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
238.55K /
9 Page |
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it Online |
Download Datasheet |
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Monolithic Power System...
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| Part No. |
HFC0300
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| OCR Text |
...i leak v hv =400v, vcc=10v 10 17 a supply voltage management (pin vcc) vcc increasing level where the current source turns off vc...2011 mps proprietary information. patent protec ted. unauthorized photocopy and duplication prohibi... |
| Description |
Variable Off Time Controller
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| File Size |
440.33K /
21 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK80S04K3L
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| OCR Text |
...on) = 2.4 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 40 v) (3) enhancement mode: v th = 2.0 to 3.0...2011/65/eu of the european parliament and of the council of 8 june 2011 on the restriction of the us... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
281.77K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TK10S04K3L
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| OCR Text |
...(on) = 22 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 40 v) (3) enhancement mode: v th = 2.0 to 3.0...2011/65/eu of the european parliament and of the council of 8 june 2011 on the restriction of the us... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
238.14K /
9 Page |
View
it Online |
Download Datasheet |
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