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Philips
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Part No. |
PHP143NQ04T PHB143NQ04T
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OCR Text |
1. product pro?le 1.1 description n-channel enhancement mode ?eld-effect transistor in a plastic package using trenchmos? technology. 1.2 fe...69a; t p = 0.27 ms; v dd 40 v; r gs =50 w ; v gs = 10 v; starting at t j =25 c - 475 mj
philips ... |
Description |
PHP/PHB143NQ04T; N-channel Trenchmos (tm) standard level FET
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File Size |
87.98K /
13 Page |
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Guangdong Kexin Industrial ...
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Part No. |
SI2325DS-HF
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OCR Text |
1 m o s f e t feat ur es v d s ( v ) = - 150v i d = - 0.69a ( v g s = - 10v ) r d s ( o n ) 1.2 ( v g s = - 10v ) r d s ( o n ) 1.3 ( v g s = - 6v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.... |
Description |
P-Channel MOSFET
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File Size |
1,682.99K /
5 Page |
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CET[Chino-Excel Technology]
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Part No. |
CEP75A3 CEB75A3
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OCR Text |
...ject to change without notice . 1
Rev 1. 2006.Nov http://www.cetsemi.com
CEP75A3/CEB75A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Curre... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
392.47K /
4 Page |
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Digitron Semiconductors
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Part No. |
2N6171 2N6173 2N6174
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OCR Text |
1.908.245-7200 2n3870-2n3873 silicon controlled rectifiers 2n3896-2n3899 revers e blocking triode thyristor 2n6171-2...69a peak) v tm - 1.5 1.85 volts gate trigger current (continuous dc) v d = 12v, r l =... |
Description |
SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR
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File Size |
734.64K /
5 Page |
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Gamma Microelectronics
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Part No. |
GMA2822M
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OCR Text |
1, may 2002 ...69a m t n e r r u c s a i b t u p n ii b -0 0 1a n ) l e n n a h c h c a e ( r e w o p t u p t u o %... |
Description |
Dual Low-voltage Power Amplifier
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File Size |
121.10K /
2 Page |
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Price and Availability
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