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				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...620 -200 -200 -3.5 -2 -14 20 40 0.32 290 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to G...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	... History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidenc...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	... History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 are "L" t 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	... History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidenc...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	... History Revision No. History 0.0 0.1 0.2 Initial issue. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name i. KM29U256T -> K9F5608U0M-YCB0 ii. KM29U256IT -> K9F5608U0M-YIB0 1. Changed tWP AC Timing - If ...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	... History Revision No. History 0.0 Initial issue. Draft Date July 17th 2000 Remark Advanced Information Preliminary 0.1 1. Support copy-back program - The copy-back program is configured to quickly and efficiently rewrite dat...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				http:// INTERSIL[Intersil Corporation]
Part No.	L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T
OCR Text	...V to 1.825V with an accuracy of 0.8%. Pull up currents on these VID pins eliminates the need for external pull up resistors. Another feature of this controller IC is the PWRGD monitor circuit which is held low until the CORE voltage increas...
Description	Microprocessor CORE Voltage Regulator Two-Phase Buck PWM Controller PWM Controller, 2-Phase Current Mode, 5-Bit VID, Reg ?.8%, 1.05-1.825 Voltage, VRM 8.5
File Size	40.63K / 5 Page	View it Online	Download Datasheet

				LINER[Linear Technology] Linear Technology, Corp.
Part No.	LM319H LT119A LT119AH LT119AJ LT319A LT319AH LT319AJ LT319AN LM119H LT0119A LM119 LM319 LM319J LM119J LM319N
OCR Text	...ications. Guaranteed Maximum 0.5mV Input Offset Voltage Input Protection Diodes Operates From Single 5V Supply 25mA Drive Capability 80ns...1 4 3 2 1 20mV 1/2 LT319A TTL OUTPUT VIN 4 2 VOUT = 5.0V FOR VLT VIN VUT VOUT = ...
Description	Dual Comparator From old datasheet system Dual Comparator DUAL COMPARATOR, 4000 uV OFFSET-MAX, 80 ns RESPONSE TIME, MBCY10
File Size	237.95K / 8 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	LNA2701L LN159
OCR Text	...ght source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.80.2 2-C0.5 8 ...
Description	GaAs Bi-directional Infrared Light Emitting Diode
File Size	43.01K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMicroelectronics
Part No.	M29W640D M29DW323
OCR Text	...b Wide application area covered 0.15m process technology technology shrink on going higher densities improved performances Increased r...1.0 -ptfl0402-504- www.st.com/flash page 2 Main Features M29DW323 32Mb (4Mbx8 / 2Mbx16), Bo...
Description	Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 16-SOIC FLASH NOR HIGH DENSITY & CONSUMER
File Size	1,807.30K / 15 Page	View it Online	Download Datasheet

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