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Matsshita / Panasonic
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| Part No. |
2SC5591
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| OCR Text |
...deflection output
15.50.5
(10.0)
3.20.1 5
(4.5)
3.00.3 5
18.60.5 (2.0) Solder Dip
* High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle * High-speed switching: tf < 0.2 s * Low Collector to... |
| Description |
Power Transistors
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| File Size |
57.26K /
2 Page |
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it Online |
Download Datasheet
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC5686
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| OCR Text |
...r TV, CRT monitor
15.50.5
(10.0)
Unit: mm
3.20.1 5
(4.5)
3.00.3 5
Features
* High breakdown voltage: VCBO 2 000 V * High-speed switching: tf < 200 ns * Wide safe operation area
26.50.5
(23.4)
(2.0)
5 (4.0) 2.00.2 ... |
| Description |
Silicon NPN triple diffusion mesa type
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| File Size |
69.07K /
3 Page |
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it Online |
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hitachi
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| Part No. |
2SD16092SD1610 2SD1609
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| OCR Text |
...est conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
31.94K /
5 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SD1750A 2SD1750 2SD1750/2SD1750A
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| OCR Text |
...-55 to +150 Unit V
7.20.3
0.80.2
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1750 2SD1750A 2SD1750 Symb... |
| Description |
2SD1750. 2SD1750A - NPN Transistor Darlington
Power Transistors
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| File Size |
61.33K /
3 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SD1750A 2SD1750
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| OCR Text |
...-55 to +150 Unit V
7.20.3
0.80.2
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1750 2SD1750A 2SD1750 Symb... |
| Description |
Power Transistors
|
| File Size |
51.74K /
2 Page |
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it Online |
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Sanyo
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| Part No. |
2SD1802 2SB1202
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| OCR Text |
...CE(sat) VBE(sat) VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)100mA VCE=(-)2V, IC=(-)3A VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)2A, IB=(-)100mA 100* 35 150 (39)25 0.19 (-0.35) IC=(-)2A, IB=(-)100mA V(BR)CBO IC=(-)10A, IE=0 V(BR... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
148.92K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SD1805
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| OCR Text |
...mm 2045B
[2SD1805]
1.5
6.5 5.0 4 2.3 0.5
Features
* Low saturation voltage. * Fast switching time. * Large current capacity. * Small and slim package making it easy to make 2SD1805-applied sets smaller.
0.85 0.7
5.5
7.0
0... |
| Description |
NPN Epitaxial Planar Silicon Transistors
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| File Size |
95.25K /
4 Page |
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it Online |
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