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Fairchild Semiconductor, Corp.
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Part No. |
IRF840S
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OCR Text |
...50 175 75 45 55 175 70 74 -- -- 6.8 1190 -- -- -- 370 3.9 8 32 1.4 -- -- notes; (1) repetitive rating: pulse width limited by maximum junction temperature (2) l=18mh, i as =8a, v dd =50v, r g =27 w , starting t j =25 c (3) i sd 8a, ... |
Description |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为0.85Ω,漏电流A N沟道功率MOSFET(不适用沟道增强型功率马鞍山场效应管(漏源电压为500V及导通电阻为0.85Ω,漏电流A)条
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File Size |
233.78K /
7 Page |
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