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7413

7413 DataSheet Power MOSFET(Vdss=30V, Id=12A)

Power MOSFET(Vdss=30V, Id=12A)

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---Full Text Search Engine--- 7413
---Full Text Search Engine--- Power MOSFET(Vdss=30V, Id=12A)

7413

PD- 91330F
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7413
HEXFET(R) Power MOSFET RDS(on) max(mW)
11@VGS = 10V
VDSS
30V
ID
12A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
12 9.6 96 2.5 0.02  20 1.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient 
Typ.
--- ---
Max.
20 50
Units
C/W
Notes  through  are on page 8
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1
3/19/02
IRF7413
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RDS(on) VGS(th) IDSS IGSS
Min. 30 --- --- --- 1.0 --- --- --- ---
Typ. --- 0.03 --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 11 VGS = 10V, ID = 7.2A  m 18 VGS = 4.5V, I D = 6.0A --- V VDS = VGS, ID = 250A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 16 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 44 7.9 9.2 8.8 8.0 35 14 1670 670 100 2290 680 1020 Max. Units Conditions --- S VDS = 10V, ID = 7.2A 66 ID = 7.2A --- nC VDS = 24V --- VGS = 10V, --- VDD = 100V --- ID = 7.2A ns --- RG = 6.2 --- VGS = 10V  --- VGS = 0V --- VDS = 25V --- pF  = 1.0MHz --- VGS = 0V, VDS = 1.0V,  = 1.0MHz --- VGS = 0V, VDS = 24V,  = 1.0MHz --- VGS = 0V, VDS = 0V to 24V 
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
120 7.2
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 50 74 3.1 A 96 1.0 75 110 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 7.2A, VGS = 0V TJ = 25C, IF = 7.2A di/dt = 100A/s 
D
S

2
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IRF7413
100
VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1
1
2.5V
0.1
2.5V 20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
T J = 150C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
ID, Drain-to-Source Current (A)
1.5
1.0
1
T J = 25C
0.5
0 2.0 3.0
VDS = 15V 20s PULSE WIDTH
4.0 5.0 6.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7413
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds
12 ID= 7.2A
VGS , Gate-to-Source Voltage (V)
10 8 6 4 2 0
10000
VDS= 24V VDS= 15V VDS= 6.0V
C, Capacitance (pF)
1000
Ciss Coss
Crss
100
10 1 10 100
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0 T J = 150C 10.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1.0
10 Tc = 25C Tj = 150C Single Pulse 1 0 1 10
100sec
1msec 10msec 100 1000
T J = 25C 0.1 0.4 0.6 0.8 VGS = 0V 1.0 1.2
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7413
12
VDS
10
RD
VGS RG 10V
Pulse Width  1 s Duty Factor  0.1 %
ID , Drain Current (A)
D.U.T.
+
8
-V DD
6
4
Fig 10a. Switching Time Test Circuit
2
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100
10
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7413
RDS (on) , Drain-to-Source On Resistance ( )
0.024
RDS(on) , Drain-to -Source On Resistance ( )
0.06
0.020
0.05
0.04
0.016 VGS = 4.5V 0.012 VGS = 10V 0.008
0.03
ID = 7.2A
0.02
0.01
0.004 0 20 40 60 80 ID , Drain Current (A)
0.00 3.2 3.3 3.4 3.5 3.6 3.7
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
300
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
250
Charge
IG ID
BOTTOM
ID 3.2A 4.6A 7.2A
Current Sampling Resistors
200
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
150
100
15V
V(BR)DSS tp
VDS L
DRIVER
50
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7413
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050]
FOOT PRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER
INTERNAT IONAL RECTIFIER LOGO
YWW XXXX F7101
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IRF7413
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 When mounted on 1 inch square copper board  Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
 Starting TJ = 25C, L = 4.4mH
R G = 25, IAS = 7.2A.
 Pulse width  300s; duty cycle  2%.
 ISD  7.2A, di/dt  120A/s, VDD  V(BR)DSS,
TJ  150C
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/02
8
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