| PART |
Description |
Maker |
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| IRF520L IRF520NSTRR IRF520NSTRL |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A)
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRFD9110 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-0.70A)
|
IRF[International Rectifier]
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRFU9120 IRFR9120 IRFR9120TRR IRFR9120TRL IRFR9120 |
-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)
|
IRF[International Rectifier]
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| IRF9140 |
-100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,???瀹?????灏????娌??MOSFET)
|
International Rectifier
|
