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MRF892

MRF892 DataSheet ASI Transistor

Transistor

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MRF892 MRF892

MRF891	[Motorola, Inc] RF POWER TRANSISTORS NPN SILICON
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MRF8372R1	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R2	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF897R	[MOTOROLA[Motorola Inc]] RF POWER TRANSISTOR NPN SILICON
MRF897	[MOTOROLA[Motorola Inc]] RF POWER TRANSISTOR NPN SILICON
MRF894	[MOTOROLA[Motorola Inc]] RF POWER TRANSISTOR NPN SILICON
MRF891S	[MOTOROLA[Motorola Inc]] RF POWER TRANSISTORS NPN SILICON
MRF890	[ASI[Advanced Semiconductor]] NPN SILICON RF POWER TRANSISTOR
MRF857S	[MOTOROLA] NPN SILICON RF POWER TRANSISTOR
MRF858S	[MOTOROLA[Motorola Inc]] NPN SILICON RF POWER TRANSISTOR
MRF858	[MOTOROLA[Motorola Inc]] NPN SILICON RF POWER TRANSISTOR
MRF846	[ASI[Advanced Semiconductor]] NPN SILICON RF POWER TRANSISTOR
MRF847	[MOTOROLA[Motorola Inc]] RF POWER TRANSISTOR NPN SILICON
MRF840	[Motorola, Inc] RF POWER TRANSISTOR NPN SILICON
MRF847	[Motorola, Inc] RF POWER TRANSISTOR NPN SILICON

MRF892
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz.
PACKAGE STYLE .230 6L FLG
A .040x45 4X .025 R .115 .430 D E .125 G H I L F C B 2XO.130
FEATURES:
* Internal Input Matching Network * PG =8.5 dB at 14 W/900 MHz * OmnigoldTM Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC 2.5 A
DIM MINIMUM
inches / mm
JK
MAXIMUM
inches / mm
50 V 30 V 4.0 V 50 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.5 C/W
A B C D E F G H I J K L
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICBO hFE COB PG C IC = 25 mA IC = 25 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 24 V
TC = 25C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50 30 4.0 2.0
UNITS
V V V mA --pF dB %
IC = 1.0 A f = 1.0 MHz POUT = 15 W f = 960 MHz
10 12.5 8.5 55 9.5 60
100
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
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