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MRF839F

MRF839F DataSheet ASI Transistor

Transistor

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MRF839F MRF839F

MRF8372	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R1	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R2	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF838A	[ASI] Transistor
MRF839F	[ASI] Transistor
MRF837	[] From old datasheet system
MRF8372	[] From old datasheet system
MRF838A	[] From old datasheet system
MRF839F	[] From old datasheet system
MRF837	[Advanced Semiconductor] NPN SILICON RF LOW POWER TRANSISTOR
MRF8372	[Advanced Power Technology] RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF8372G	[Advanced Power Technology] RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF838A	[Advanced Semiconductor] NPN SILICON RF POWER TRANSISTOR
MRF839F	[Advanced Semiconductor] NPN SILICON RF POWER TRANSISTOR
MRF8372R2	[MOTOROLA[Motorola, Inc]] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372	[MOTOROLA[Motorola, Inc]] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R1	[MOTOROLA[Motorola, Inc]] RF LOW POWER TRANSISTOR NPN SILICON

MRF839F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz.
.430 D
PACKAGE STYLE .230 6L FLG
A .040x45 4X .025 R .115 C B 2XO.130
FEATURES INCLUDE:
* Input Matching Network * High Gain * Gold Metalization
DIM
E .125 G H I JK L F
MINIMUM
inches / mm
MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG JC 0.6 A 36 V 20 W @ TC = 25 C -55 C to +200 C -55 C to +150 C 9.0 C/W
O O O O O O
A B C D E F G H I J K L
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60
1 & 3 & 4 & 6 = EMITTER 2 = BASE 5 = COLLECTOR
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICES hFE COB PG C
TC = 25 C
O
TEST CONDITIONS
IC = 5.0 mA IC = 5.0 mA IE = 100 A VCE = 15 V VCE = 5.0 V VCB = 15 V VCE = 12.5 V FO = 870 MHz ICQ = 50mA IC = 100 mA f = 1.0 MHz POUT = 3.0 W
MINIMUM TYPICAL MAXIMUM
40 16 3.5 1 10 150 10 8.0 50 10.0
UNITS
V V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1