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MRF838A

MRF838A DataSheet ASI Transistor

Transistor

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MRF838A MRF838A

MRF8372	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R1	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R2	[Motorola, Inc] RF LOW POWER TRANSISTOR NPN SILICON
MRF838A	[ASI] Transistor
MRF839F	[ASI] Transistor
MRF837	[] From old datasheet system
MRF8372	[] From old datasheet system
MRF838A	[] From old datasheet system
MRF839F	[] From old datasheet system
MRF837	[Advanced Semiconductor] NPN SILICON RF LOW POWER TRANSISTOR
MRF8372	[Advanced Power Technology] RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF8372G	[Advanced Power Technology] RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF838A	[Advanced Semiconductor] NPN SILICON RF POWER TRANSISTOR
MRF839F	[Advanced Semiconductor] NPN SILICON RF POWER TRANSISTOR
MRF8372R2	[MOTOROLA[Motorola, Inc]] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372	[MOTOROLA[Motorola, Inc]] RF LOW POWER TRANSISTOR NPN SILICON
MRF8372R1	[MOTOROLA[Motorola, Inc]] RF LOW POWER TRANSISTOR NPN SILICON

MRF838A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE .205 4L STUD
D
4
3
A
2 1
C
FEATURES INCLUDE:
* Gold Metallization * Emitter Ballasting * High Gain
H
B
G F
E
#8-32UNC
J
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG JC
O O
DIM A B C D E F G H I J
M INIM UM
inches / m m
M AXIM UM
inches / m m
600 mA 36 V 8.75 W @ TC = 25 C -65 Cto +200 C -65 Cto +200 C 20 C/W
O O O O
.976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100
1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800 .196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200
1 & 3 = EMITER 2 = BASE 4 = COLLECTOR
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO hFE COB PG C IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 18 4.0
UNITS
V V V ---
IC = 150 mA f = 1.0 MHz POUT = 1.0 W f = 870 MHz
20 7.5 6.5 50 7.5
VCB = 12.5 V VCE = 12.5 V
pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1