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MRF750

MRF750 DataSheet ASI Transistor

Transistor

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MRF750 MRF750

MRF752	[ASI] Transistor
MRF7S21170H	[Motorola Semiconductor Products] 2110¨C2170 MHz, 50 W Avg., 28 V Single W¨CCDMA Lateral N¨CChannel RF Power MOSFETs
MRF7S19100N	[Motorola Semiconductor Products] 1930¨C1990 MHz, 29 W Avg., 28 V Single W¨CCDMA Lateral N¨CChannel RF Power MOSFETs
MRF7S19100NBR1	[] RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19080HR3	[FREESCALE] RF Power Field Effect Transistors
MRF750	[ASI] Transistor
MRF750	[] From old datasheet system
MRF7S19100N	[] From old datasheet system
MRF7S21170H	[] From old datasheet system
MRF7S38010H	[Freescale Semiconductor, Inc] RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S38010HR3	[Freescale Semiconductor, Inc] RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S38010HSR3	[Freescale Semiconductor, Inc] RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S18170H	[FREESCALE] RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HR3	[FREESCALE] RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170H	[Freescale Semiconductor, Inc] RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HR3	[Freescale Semiconductor, Inc] RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HSR3	[Freescale Semiconductor, Inc] RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF750	[ASI[Advanced Semiconductor]] NPN SILICON RF TRANSISTOR

MRF750
NPN SILICON RF TRANSISTOR
PACKAGE STYLE .205" 4L PILL DESCRIPTION:
The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V.
4
A D
3
2 1
C
FEATURES INCLUDE:
* High Power Gain * Infinite VSWR
G H
B F
E
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG JC
O O
DIM A B C D
MINIMUM
inches / mm
MAXIMUM
inches / mm
200 mA 13 V 2.5 W @ TC = 25 C -65 C to +150 C -65 C to +150 C 28.5 C/W
O O O O
.976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .106 / 2.700 .039 / 1.000 .004 / 0.100 .200 / 5.100
1.00 / 25.400 1.00 / 25.400 .031 / 0.800 .139 / 3.400 .047 / 1.200 .006 / 0.150 .208 / 5.300
E F G H
1 & 3 = EMITTER 2 = BASE 4 = COLLECTOR
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE Cob GPE  IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 9.0 V VCE = 5.0 V VCB = 7.5 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
13 25 4.0 500
UNITS
V V V A ---
IC = 50 mA f = 1.0 MHz Pout = 500 mW fo = 470 MHz
20
70 3.5 5.0
pF dB %
VCC = 7.5 V
10 55
11
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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