DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 15 1999 Apr 23 Philips Semiconductors Product specification NPN switching transistor FEATURES * Low current (max. 200 mA) * Low voltage (max. 40 V). APPLICATIONS * High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. PINNING PIN 1 2 3 collector base emitter 2N3904 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 60 40 6 200 300 100 500 +150 150 +150 UNIT V V V mA mA mA mW C C C 1999 Apr 23 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; note 1 IC = 50 mA; IB = 5 mA; note 1 base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA; note 1 IC = 50 mA; IB = 5 mA; note 1 IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz 60 80 100 60 30 - - - - - - 300 - - - 300 - - 200 200 850 950 4 8 - 5 - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 2N3904 UNIT K/W MAX. 50 50 UNIT nA nA mV mV mV mV pF pF MHz dB Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - - - - - - 65 35 35 240 200 50 ns ns ns ns ns ns 1999 Apr 23 3 Philips Semiconductors Product specification NPN switching transistor 2N3904 andbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Vi R1 R2 RC Vo (probe) 450 DUT oscilloscope MLB826 Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = -1.9 V; VCC = 3 V. Oscilloscope input impedance Zi = 50 . Fig.2 Test circuit for switching times. 1999 Apr 23 4 Philips Semiconductors Product specification NPN switching transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads 2N3904 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 23 5 Philips Semiconductors Product specification NPN switching transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values 2N3904 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 23 6 Philips Semiconductors Product specification NPN switching transistor NOTES 2N3904 1999 Apr 23 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05386