| PART |
Description |
Maker |
| 70V3399S166PRFG8 70V3319S166PRFG8 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM
|
Integrated Device Techn...
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32
Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No
JT 55C 55#22M SKT PLUG
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| KM68V1002CI |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61LV12816L-8T IS61LV12816L-10BLI IS61LV12816L-10 |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 8 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 8 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| AT28HC256-12JC AT28HC256-12JI AT28HC256-12PC AT28H |
256 (32K x 8) high speed parallel EEPROM, 90ns
256 (32K x 8) high speed parallel EEPROM, 120ns
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-PDIP -55 to 125 32K X 8 EEPROM 5V, 120 ns, PDIP28
High Speed CMOS Quad Analog Switches with Level Translation 16-SOIC -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-SOIC -55 to 125 32K X 8 EEPROM 5V, 120 ns, PDSO28
256 32K x 8 High Speed Parallel EEPROMs 32K X 8 EEPROM 5V, 90 ns, CDIP28
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-PDIP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PQCC32
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-PDIP -55 to 125 32K X 8 EEPROM 5V, 90 ns, PQCC32
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-SOIC -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
High Speed CMOS Quad Analog Switches with Level Translation 16-TSSOP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PQCC32
High Speed CMOS Quad Analog Switches with Level Translation 16-TSSOP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
REED RELAY, SPST, 24V, ES
256 32K x 8 High Speed CMOS E2PROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
From old datasheet system
128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
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http://
SIEMENS AG
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