| PART |
Description |
Maker |
| BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
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Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BAV70WT1 ON0133 |
From old datasheet system
CASE 419-02, STYLE 5 SC-70/SOT-323
|
MOTOROLA[Motorola, Inc]
|
| BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-2, STYLE 3 SOT-23/SC-0
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| DTA143EE DTA143EE_D ON0279 |
Bias Resistor Transistor
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| DTC114TE DTC114TE_D ON0280 |
CASE 463-01/ STYLE 1 SOT-416/SC-90
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
Motorola, Inc.
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
|
| BAS7004LT1 |
CASE 318-08, STYLE 12 SOT-23 TO-236AB
CASE 318-08 STYLE 12 SOT-23 TO-236AB
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MMBFJ309 MMBFJ309LT1 MMBFJ310LT1 ON2105 |
From old datasheet system
CASE 318?8, STYLE 10 SOT?3 (TO?36AB)
JFET VHF/UHF Amplifier Transistor
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BAV70LT1 ON0132 |
CASE 318-08, STYLE 9 SOT-23 (TO-236AB)
From old datasheet system
Monolithic Dual Switching Diode Common Cathode
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2N5460 2N5462 ON0061 2N5461 2N5460THRU2N5462 MOTOR |
JFET Amplifier P-Channel
From old datasheet system
CASE 29-4, STYLE 7TO-2 (TO-26AA)
CASE 2904, STYLE 7 TO92 (TO226AA)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
ON Semiconductor
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| BC308C BC307C BC307B BC307 ON0143 |
Amplifier Transistors(PNP Silicon) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| ST95P08 ST95P08B1TR ST95P08B3TR ST95P08B6TR ST95P0 |
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes
8 Kbit Serial SPI EEPROM with Positive Clock Strobe
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
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