| PART |
Description |
Maker |
| M29F800D |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
| M29W800DB70M6 M29W800DB70N1 M29W800DB70N3T M29W800 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29F800AB90M1 M29F800AB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
| M29F800DB70M1E |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
|
STMicroelectronics
|
| LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27 |
Series One Watt Zeners
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
Serial access Real-Time Clock with alarm
|
1N4728A
STMICROELECTRONICS[STMicroelectronics]
|
| M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体兆位128KB的x16的SRAM，多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体2兆位128KB的x16的SRAM，多个存储产
PV76L14-18P
|
http://
STMicroelectronics N.V.
意法半导
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
CANMS3470L16-23PL/C 16兆x16插槽，开机区块快闪记忆体Mbit的SRAM56Kb x16，内存产品多
|
意法半导
STMicroelectronics N.V.
|
| M28W160B-GBT M28W160BB M28W160BTB100GB1T M28W160BT |
16 Mbit 1Mb x16/ Boot Block Low Voltage Flash Memory
16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory 16兆x16插槽，低电压启动座快闪记忆体
|
STMicroelectronics N.V.
|
